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1

A new gradual hole injection dual-gate LIGBT

Byeong-Hoon Lee,, Jung-Hoon Chun,, Seong-Dong Kim,, Dae-Seok Byeon,, Won-Oh lee,, Min-Koo Han,, Yearn-Ik Choi,

Journal:

IEEE Electron Device Letters

Year:

1998

Language:

english

File:

PDF, 41 KB

english, 1998

2

[IEEE 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings - Toulouse, France (22-25 May 2000)] 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) - A fast-switching SOI SA-LIGBT without NDR region

Jung-Hoon Chul,, Dae-Seok Byeon,, Jae-Keun Oh,, Min-Koo Han,, Yearn-Ik Choi,

Year:

2000

Language:

english

File:

PDF, 302 KB

english, 2000

3

CB-BRT: a new base resistance-controlled thyristor employing a self-aligned corrugated p-base

Dae-Seok Byeon,, Byeong-Hoon Lee,, Doo-Young Kim,, Min-Koo Han,, Yearn-Ik Choi,

Journal:

IEEE Electron Device Letters

Year:

1998

Language:

english

File:

PDF, 61 KB

english, 1998

4

[IEEE 2014 14th Non-Volatile Memory Technology Symposium (NVMTS) - Jeju Island, Korea (South) (2014.10.27-2014.10.29)] 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS) - A world's first product of three-dimensional vertical NAND Flash memory and beyond

Park, Ki-Tae, Byeon, Dae-Seok, Kim, Doo-Hyun

Year:

2014

Language:

english

File:

PDF, 1.17 MB

english, 2014

5

The breakdown voltage of negative curvatured p+n diodes using a SOI layer

Dae-Seok Byeon, Min-Koo Han, Yearn-Ik Choi

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 217 KB

english, 1997

6

Optimum design of the field plate in the cylindrical p+n junction: analytical approach

Kyoung Yang, Dae-Seok Byeon, Min-Koo Han, Yearn-Ik Choi

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 297 KB

english, 1998

7

[IEEE 2000 22nd International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 May 2000)] 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) - The experimental study on the temperature characteristics of the BRT and the EST

Byung-Chul Jeon,, Dae-Seok Byeon,, Jae-Keun Oh,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1999

Language:

english

File:

PDF, 225 KB

english, 1999

8

High-performance 1-Gb-NAND flash memory with 0.12-μm technology

June Lee, Heung-Soo Im, Dae-Seok Byeon, Kyeong-Han Lee, Dong-Hyuk Chae, Kyong-Hwa Lee, Sang Won Hwang, Sung-Soo Lee, Young-Ho Lim, Jae-Duk Lee, Jung-Dal Choi, Young-Il Seo, Jong-Sik Lee, Kang-Deog Suh

Journal:

IEEE Journal of Solid-State Circuits

Year:

2002

Language:

english

File:

PDF, 697 KB

english, 2002

9

A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications

Lee, J., Sung-Soo Lee, Oh-Suk Kwon, Kyeong-Han Lee, Dae-Seok Byeon, In-Young Kim, Kyoung-Hwa Lee, Young-Ho Lim, Byung-Soon Choi, Jong-Sik Lee, Wang-Chul Shin, Jeong-Hyuk Choi, Kang-Deog Suh

Journal:

IEEE Journal of Solid-State Circuits

Year:

2003

Language:

english

File:

PDF, 1.05 MB

english, 2003

10

[IEEE ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - San Francisco, CA, USA (Feb. 6-10, 2005)] ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - An 8gb multi-level NAND flash memory with 63nm STI CMOS process technology

Dae-Seok Byeon,, Sung-Soo Lee,, Young-Ho Lim,, Jin-Sung Park,, Wook-Kee Han,, Pan-Suk Kwak,, Dong-Hwan Kim,, Dong-Hyuk Chae,, Seung-Hyun Moon,, Seung-Jae Lee,, Hyun-Chul Cho,, Jung-Woo Lee,

Year:

2005

Language:

english

File:

PDF, 207 KB

english, 2005

11

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A lateral SOI BMFET with high current gain

Seong-Dong Kim,, Dae-Seok Byeon,, Kyoung Yang,, Oh-Kyong Kwon,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1995

Language:

english

File:

PDF, 475 KB

english, 1995

12

[IEEE 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99 - Toronto, Ont., Canada (26-28 May 1999)] 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) - The maximum controllable current of improved base resistance controlled thyristor employing a self-aligned corrugated p-base

Dae-Seok Byeon,, You-Sang Lee,, Won-Oh Lee,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1999

Language:

english

File:

PDF, 304 KB

english, 1999

13

[IEEE IEEE International Solid-State Circuits Conference - San Francisco, CA, USA (9-13 Feb. 2003)] 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. - A 1.8 V 2 Gb NAND flash memory for mass storage applications

June Lee,, Sung-Soo Lee,, Oh-Suk Kwon,, Kyeong-Han Lee,, Kyong-Hwa Lee,, Dae-Seok Byeon,, In-Young Kim,, Young-Ho Lim,, Byung-Soon Choi,, Jong-Sik Lee,, Wang-Chul Shin,, Jeong-Hyuk Choi,,

Year:

2003

Language:

english

File:

PDF, 457 KB

english, 2003

14

[IEEE 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) - San Francisco, CA, USA (Feb 3-7, 2002)] 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) - A 1.8V 1Gb NAND flash memory with 0.12μm STI process technology

June Lee,, Heung-Soo Im,, Dae-Seok Byeon,, Kyeong-Han Lee,, Dong-Hyuk Chae,, Kyong-Hwa Lee,, Young-Ho Lim,, Jung-Dal Choi,, Young-Il Seo,, Jong-Sik Lee,, Kang-Deog Suh,

Year:

2002

Language:

english

File:

PDF, 312 KB

english, 2002

15

[IEEE 2004 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA (15-19 Feb. 2004)] 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) - A 3.3 V 4 Gb four-level NAND flash memory with 90 nm CMOS technology

Seungjae Lee,, Young-Taek Lee,, Wook-Kee Han,, Dong-Hwan Kim,, Moo-Sung Kim,, Seung-Hyun Moon,, Hyun Chul Cho,, Jung-Woo Lee,, Dae-Seok Byeon,, Young-Ho Lim,, Hyung-Suk Kim,, Sung-Hoi Hur,

Year:

2004

Language:

english

File:

PDF, 854 KB

english, 2004

16

[IEEE 2005 IEEE Asian Solid-State Circuits Conference - Hsinchu, Taiwan (2005.11.1-2005.11.1)] 2005 IEEE Asian Solid-State Circuits Conference - A Comparison between 63nm 8Gb and 90nm 4Gb Multi-Level Cell NAND Flash Memory for Mass Storage Application

Byeon, Dae-seok, Lee, Sung-soo, Lim, Young-ho, Kang, Dongku, Han, Wook-kee, Kim, Dong-hwan, Suh, Kang-deog

Year:

2006

Language:

english

File:

PDF, 414 KB

english, 2006

17

Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back

Lee, Byeong-Hoon, Byeon, Dae-Seok, Kim, Doo-Young, Lee, Won-Oh, Han, Min-Koo, Choi, Yearn-Ik

Journal:

Japanese Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 393 KB

english, 1997

18

[IEEE 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers - San Francisco, CA, USA (3-7 Feb. 2002)] 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) - A 1.8 V 1 Gb NAND flash memory with 0.12 μm STI process technology

Lee, J., Heung-Soo Im,, Dae-Seok Byeon,, Kyeong-Han Lee,, Dong-Hyuk Chae,, Kyong-Hwa Lee,, Young-Ho Lim,, Jung-Dal Choi,, Young-Il Seo,, Jong-Sik Lee,, Kang-Deog Suh,

Year:

2002

Language:

english

File:

PDF, 654 KB

english, 2002

19

The Maximum Controllable Current of Emitter Switched Thyristors Employing the Segmented P-Base

Byeon, Dae-Seok, Lee, Byeong-Hoon, Han, Min-Koo, Choi, Yearn-Ik

Journal:

Physica Scripta

Year:

1999

Language:

english

File:

PDF, 116 KB

english, 1999